9月23日上午，香港科技大学陈敬教授（Prof. Kevin J. Chen）应邀来苏州纳米所进行学术访问。访问期间，在A429会议室举行了陈敬教授客座研究员的受聘仪式暨学术报告会。刘佩华副所长、纳米加工平台主任张宝顺研究员等参加了此次会议，会议由纳米加工平台副主任蔡勇研究员主持。

报告开始前，刘佩华副所长为陈敬教授颁发了客座研究员聘书，加工平台主任张宝顺研究员为陈敬教授颁发了纳米加工平台顾问证书。随后，陈敬教授作了题为“Challenges in GaN Power Electronics”的学术报告。报告详细介绍了GaN材料在功率器件应用中的发展前景、所遇到的困难、技术实现及新型的GaN HEMT器件。报告结束后，陈敬教授与在座师生对相关问题进行了热烈的讨论和交流。

刘佩华副所长为陈敬教授颁发客座研究员聘书

张宝顺主任为陈敬教授颁发纳米加工平台顾问聘书

陈敬教授作学术报告

Biography: Prof. Chen received the B.S. degree from Peking University in 1988 and the PhD degree from University of Maryland, College Park, USA in 1993. From 1994 to 1995, he was a research engineer in NTT LSI laboratories, Atsugi, Japan, engaging in the research and development of functional quantum effect devices and heterojunction FET's (HFET's). From 1996 to 1998, he was an assistant professor in the Department of Electronic Engineering, City University of Hong Kong. Dr. Chen then joined the Wireless Semiconductor Division of Agilent Technologies, Inc., in 1999 working on RF power amplifiers used in dual-band GSM/DCS wireless handsets. In 2000, Dr. Chen joined Hong Kong University of Science and Technology (HKUST), where he is currently a professor in the Department of Electronic and Computer Engineering. At HKUST, he has carried out research in wide bandgap III-nitride devices, silicon-based microwave passive components and 3D through-silicon-via interconnects technology, GaN-based MEMS devices, and multi-band reconfigurable microwave filters. Currently, his group is focused on developing GaN device technologies for power management and high-temperature electronics applications.

Prof. Chen has authored or co-authored more than 250 publications in international technical journals and conference proceedings. Prof. Chen is a senior member of IEEE and a distinguished lecturer of IEEE Electron Device Society. He is also an associate editor of IEEE Transactions on Microwave Theory and Techniques and Japanese Journal of Applied Physics. He is a member of IEEE Electron Device Society Compound Semiconductor Devices and Circuits Committee.